Monolithic mm-wave phase shifter using optically activated superconducting switches

A phase shifter is disclosed having a reference path and a delay path, light sources, and superconductive switches. Each of the superconductive switches is terminated in a virtual short circuit, which may be a radial stub. Switching between the reference path and delayed path is accomplished by illuminating the superconductive switches connected to the desired path, while not illuminating the superconductive switches connected to the other path

Optically interconnected phased arrays

Phased-array antennas are required for many future NASA missions. They will provide agile electronic beam forming for communications and tracking in the range of 1 to 100 GHz. Such phased arrays are expected to use several hundred GaAs monolithic integrated circuits (MMICs) as transmitting and receiving elements. However, the interconnections of these elements by conventional coaxial cables and waveguides add weight, reduce flexibility, and increase electrical interference. Alternative interconnections based on optical fibers, optical processing, and holography are under evaluation as possible solutions. In this paper, the current status of these techniques is described. Since high-frequency optical components such as photodetectors, lasers, and modulators are key elements in these interconnections, their performance and limitations are discussed

Optically controlled microwave devices and circuits: Emerging applications in space communications systems

Optical control of microwave devices and circuits by an optical fiber has the potential to simplify signal distribution networks in high frequency communications systems. The optical response of two terminal and three terminal (GaAs MESFET, HEMT, PBT) microwave devices are compared and several schemes for controlling such devices by modulated optical signals examined. Monolithic integration of optical and microwave functions on a single semiconductor substrate is considered to provide low power, low loss, and reliable digital and analog optical links for signal distribution

Optically controlled phased-array antenna technology for space communication systems

Using MMICs in phased-array applications above 20 GHz requires complex RF and control signal distribution systems. Conventional waveguide, coaxial cable, and microstrip methods are undesirable due to their high weight, high loss, limited mechanical flexibility and large volume. An attractive alternative to these transmission media, for RF and control signal distribution in MMIC phased-array antennas, is optical fiber. Presented are potential system architectures and their associated characteristics. The status of high frequency opto-electronic components needed to realize the potential system architectures is also discussed. It is concluded that an optical fiber network will reduce weight and complexity, and increase reliability and performance, but may require higher power

High-Power, High-Temperature Superconductor Technology Development

Since the first discovery of high-temperature superconductors (HTS) 10 years ago, the most promising areas for their applications in microwave systems have been as passive components for communication systems. Soon after the discovery, experiments showed that passive microwave circuits made from HTS material exceeded the performance of conventional devices for low-power applications and could be 10 times as small or smaller. However, for superconducting microwave components, high-power microwave applications have remained elusive until now. In 1996, DuPont and Com Dev Ltd. developed high-power superconducting materials and components for communication applications under a NASA Lewis Research Center cooperative agreement, NCC3-344 "High Power High Temperature Superconductor (HTS) Technology Development." The agreement was cost shared between the Defense Advanced Research Projects Agency's (DARPA) Technology Reinvestment Program Office and the two industrial partners. It has the following objectives: 1) Material development and characterization for high-power HTS applications; 2) Development and validation of generic high-power microwave components; 3) Development of a proof-of-concept model for a high-power six-channel HTS output multiplexer

Microwave performance of an optically controlled AlGaAs/GaAs high electron mobility transistor and GaAs MESFET

Direct current and also the microwave characteristics of optically illuminated AlGaAs/GaAs HEMT are experimentally measured for the first time and compared with that of GaAs MESFET. The results showed that the average increase in the gain is 2.89 dB under 1.7 nW/sq cm optical intensity at 0.83 microns. Further, the effect of illumination on S-parameters is more pronounced when the devices are biased close to pinch off. Novel applications of optically illuminated HEMT as a variable gain amplifier, high speed high frequency photo detector, and mixer are demonstrated

A high frequency GaAlAs travelling wave electro-optic modulator at 0.82 micrometers

Experimental GaAlAs modulators operating at 0.82 micrometers using a Mach-Zehnder interferometer configuration were designed and fabricated. Coplanar 50 ohm travelling wave microwave electrodes were used to obtain a bandwidth length product of 11.95 GHz-cm. The design, fabrication and dc performance of the GaAlAs travelling wave modulator is presented

Dependence of the critical temperature of laser-ablated YBa2Cu3O(7-delta) thin films on LaAlO3 substrate growth technique

Samples of LaAlO3 made by flame fusion and Czochralski method were subjected to the same temperature conditions that they have to undergo during the laser ablation deposition of YBa2Cu3O(7 - delta) thin films. After oxygen annealing at 750 C, the LaAlO3 substrate made by two methods experienced surface roughening. The degree of roughening on the substrate made by Czochralski method was three times greater than that on the substrate made by flame fusion. This excessive surface roughening may be the origin of the experimentally observed lowering of the critical temperature of a film deposited by laser ablation on a LaAlO3 substrate made by Czochralski method with respect to its counterpart deposited on LaAlO3 substrates made by flame fusion

Architecting Communication Network of Networks for Space System of Systems

The National Aeronautics and Space Administration (NASA) and the Department of Defense (DoD) are planning Space System of Systems (SoS) to address the new challenges of space exploration, defense, communications, navigation, Earth observation, and science. In addition, these complex systems must provide interoperability, enhanced reliability, common interfaces, dynamic operations, and autonomy in system management. Both NASA and the DoD have chosen to meet the new demands with high data rate communication systems and space Internet technologies that bring Internet Protocols (IP), routers, servers, software, and interfaces to space networks to enable as much autonomous operation of those networks as possible. These technologies reduce the cost of operations and, with higher bandwidths, support the expected voice, video, and data needed to coordinate activities at each stage of an exploration mission. In this paper, we discuss, in a generic fashion, how the architectural approaches and processes are being developed and used for defining a hypothetical communication and navigation networks infrastructure to support lunar exploration. Examples are given of the products generated by the architecture development process

Properties of large area ErBa2Cu3O(7-x) thin films deposited by ionized cluster beams

ErBa2Cu3O(7-x) films have been produced by simultaneous deposition of Er, Ba, and Cu from three ionized cluster beam (ICB) sources at acceleration voltages of 0.3 to 0.5 kV. Combining ozone oxidation with ICB deposition at 650 C eliminated any need of post annealing processing. The substrates were rotated at 10 rotations per minute during the deposition which took place at a rate of about 3 to 4 nm. Films with areas up to 70 mm in diameter have been made by ICB deposition. These films, 100 nm thick, were deposited on SrTiO3 (100) substrates at 650 C in a mixture of six percent O3 in O2 at a total pressure of 4 x 10(exp -4) Torr. They had T(sub c) ranging from 84.3 K to 86.8 K over a 70 mm diameter and J(sub c) above 10(exp 6) A/sq cm at 77 K. X ray diffraction measurements of the three samples showed preferential c-axis orientation normal to the substrate surface. Scanning electron micrographs (SEM) of the three samples also show some texture dependence on sample position. For the three samples, there is a correlation between SEM texture, full width at half-maximum of rocking curves and J(sub c) versus temperature curves